Fusible Flameproof Resistors

FEATURES High stability, accuracy, and reliability Noncombustible coating Uniform fusing time Low temperature coefficient (350ppm/o C ) For wire wound version, see FKN

文件：1.29475 Mbytes 页数：2 Pages

RFE

RFE international

Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage cur

文件：68.83 Kbytes 页数：2 Pages

FORMOSA

美丽微半导体

4-Kbit (512 × 8) Serial (SPI) F-RAM

Features ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Very fast

文件：686.76 Kbytes 页数：22 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Kbit (512 × 8) Serial (SPI) F-RAM

Features ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Very fast

文件：686.76 Kbytes 页数：22 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Kbit (512 × 8) Serial (SPI) F-RAM

Features ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Very fast

文件：686.76 Kbytes 页数：22 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Kbit (512 × 8) Serial (SPI) F-RAM

Features ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Very fast

文件：686.76 Kbytes 页数：22 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Kbit (512 × 8) Serial (SPI) F-RAM

Features ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Very fast

文件：686.76 Kbytes 页数：22 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage cur

文件：71.21 Kbytes 页数：2 Pages

FORMOSA

美丽微半导体

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage cur

文件：71.29 Kbytes 页数：2 Pages

FORMOSA

美丽微半导体

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage cur

文件：72.24 Kbytes 页数：2 Pages

FORMOSA

美丽微半导体