Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage cur

文件：68.83 Kbytes 页数：2 Pages

FORMOSA

美丽微半导体

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 100 Volts CURRENT 2.0 Amperes)

文件：29.36 Kbytes 页数：2 Pages

RECTRON

丽正国际

Schottky Diodes

分立

Rectron

丽正国际

4-Kbit (512 × 8) Serial (SPI) F-RAM

Features ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Very fast

文件：686.76 Kbytes 页数：22 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Kbit (512 × 8) Serial (SPI) F-RAM

Features ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Very fast

文件：686.76 Kbytes 页数：22 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Kbit (512 × 8) Serial (SPI) F-RAM

Features ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Very fast

文件：686.76 Kbytes 页数：22 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Kbit (512 × 8) Serial (SPI) F-RAM

Features ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Very fast

文件：686.76 Kbytes 页数：22 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Kbit (512 × 8) Serial (SPI) F-RAM

Features ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Very fast

文件：686.76 Kbytes 页数：22 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage cur

文件：71.21 Kbytes 页数：2 Pages

FORMOSA

美丽微半导体

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage cur

文件：71.29 Kbytes 页数：2 Pages

FORMOSA

美丽微半导体