256Kb Serial 3V F-RAM Memory

Description The FM25V02 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while e

文件：549.39 Kbytes 页数：17 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256Kb Serial 3V F-RAM Memory

Description The FM25V02 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while e

文件：549.39 Kbytes 页数：17 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512Kb Serial 3V F-RAM Memory

Description The FM25V05 is a 512-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, over

文件：532.21 Kbytes 页数：16 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512Kb Serial 3V F-RAM Memory

Description The FM25V05 is a 512-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, over

文件：532.21 Kbytes 页数：16 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1Mb Serial 3V F-RAM Memory

Description The FM25V10 is a 1-megabit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, over

文件：531.26 Kbytes 页数：16 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1Mb Serial 3V F-RAM Memory

Description The FM25V10 is a 1-megabit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, over

文件：531.26 Kbytes 页数：16 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 100 Volts CURRENT 2.0 Amperes)

文件：29.36 Kbytes 页数：2 Pages

RECTRON

丽正国际

HIGH VOLTAGE RECTIFIER VOLTAGE 2500 Volts CURRENT 0.15 Ampere

文件：22.77 Kbytes 页数：2 Pages

RECTRON

丽正国际

HIGH VOLTAGE RECTIFIER VOLTAGE RANGE 1200 to 3500 Volts CURRENT 0.2 to 0.5 Ampere

文件：128.9 Kbytes 页数：6 Pages

RECTRON

丽正国际

4Kb FRAM Serial Memory

文件：631.8 Kbytes 页数：14 Pages

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