256Kb Serial 3V F-RAM Memory

Description The FM25V02 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while e

文件：549.39 Kbytes 页数：17 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256Kb Serial 3V F-RAM Memory

文件：343.84 Kbytes 页数：17 Pages

RAMTRON

256Kb Serial 3V F-RAM Memory

Description\nThe FM25V02 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhe 256K bit Ferroelectric Nonvolatile RAM\n•  Organized as 32,768 x 8 bits\n•  High Endurance 100 Trillion (1014) Read/Writes\n•  10 Year Data Retention\n•  NoDelay™ Writes\n•  Advanced High-Reliability Ferroelectric Process\nVery Fast Serial Peripheral Interface - SPI\n•  Up to 40 MHz Frequency\n•  Di;

Infineon

英飞凌

256Kb Serial 3V F-RAM Memory

Description The FM25V02 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while e

文件：549.39 Kbytes 页数：17 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256Kb Serial 3V F-RAM Memory

Description The FM25V02 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while e

文件：549.39 Kbytes 页数：17 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256Kb Serial 3V F-RAM Memory

Description The FM25V02 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while e

文件：549.39 Kbytes 页数：17 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256Kb Serial 3V F-RAM Memory

Description The FM25V02 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while e

文件：549.39 Kbytes 页数：17 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256Kb Serial 3V F-RAM Memory

文件：504.9 Kbytes 页数：18 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256-Kbit (32K 횞 8) Serial (SPI) F-RAM

文件：819.15 Kbytes 页数：23 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256-Kbit (32K 횞 8) Serial (SPI) F-RAM

文件：819.15 Kbytes 页数：23 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司