丝印：FGD4；Package：SMBFlat；40 V, 2 A low drop power Schottky rectifier

Features • Very small conduction losses • Negligible switching losses • Low forward voltage drop • Surface mount miniature package • Avalanche rated • ECOPACK2 component

文件：390.7 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

360V, PDP IGBT

General Description Using novel trench IGBT technology, Fairchild’s new series of trench IGBTs offer the optimum performance for consumer appliances and PDP TV applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Vo

文件：689.11 Kbytes 页数：8 Pages

Fairchild

仙童半导体

360 V PDP Trench IGBT

General Description Using novel trench IGBT technology, Fairchild’s new series of trench IGBTs offer the optimum performance for consumer appliances and PDP TV applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Vo

文件：1.1359 Mbytes 页数：8 Pages

Fairchild

仙童半导体

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

Fairchild

仙童半导体

360 V PDP Trench IGBT

General Description Using novel trench IGBT technology, Fairchild’s new series of trench IGBTs offer the optimum performance for consumer appliances and PDP TV applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Vo

文件：1.1359 Mbytes 页数：8 Pages

Fairchild

仙童半导体