丝印：FGH30S130P；Package：TO-247；1300 V, 30 A Shorted-anode IGBT

Features • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.75 V @ IC = 30 A • High Input Impedance • RoHS Compliant General Description Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching

文件：823.84 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FGH30S130P；Package：TO-247；1300 V, 30 A Shorted-anode IGBT

Features • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.75 V @ IC = 30 A • High Input Impedance • RoHS Compliant General Description Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching

文件：823.84 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Shorted AnodeTM IGBT

文件：665.47 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司