FGY75T120SQDN芯片代码Marking-114ic电子网

丝印	下载订购	功能描述	制造商上传企业	LOGO
FGY75T120SQDN	文件：559.08 Kbytes Page：9 Pages	型号：FGY75T120SQDN；Package：TO-247-3LD；Ultra Field Stop IGBT, 1200 V, 75 A General Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well s 文件：559.08 Kbytes 页数：9 Pages	ONSEMI 安森美半导体	ONSEMI
FGY75T120SQDN	文件：559.08 Kbytes Page：9 Pages	型号：FGY75T120SQDN；Package：TO-247-3LD；Ultra Field Stop IGBT, 1200 V, 75 A General Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well s 文件：559.08 Kbytes 页数：9 Pages	ONSEMI 安森美半导体	ONSEMI

更多FGY75T120SQDN供应商更新时间2025-8-6 15:01:00