FGY120T65SPD-F085芯片代码丝印对应型号-114ic电子网

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FGY120T65SPD	文件：481.25 Kbytes Page：11 Pages	型号：FGY120T65SPD-F085；Package：TP-247；Field Stop Trench IGBT With Soft Fast Recovery Diode 650 V, 120 A Features • Very Low Saturation Voltage : VCE(sat) = 1.5 V(Typ.) @ IC = 120 A • Maximum Junction Temperature : TJ = 175°C • Positive Temperature Co−efficient • Tight Parameter Distribution • High Input Impedance • 100% of the Parts are Dynamically Tested • Short Circuit Ruggedness > 6 s 文件：481.25 Kbytes 页数：11 Pages	ONSEMI 安森美半导体	ONSEMI
FGY120T65SPD	文件：481.25 Kbytes Page：11 Pages	型号：FGY120T65SPD-F085；Package：TP-247；Field Stop Trench IGBT With Soft Fast Recovery Diode 650 V, 120 A Features • Very Low Saturation Voltage : VCE(sat) = 1.5 V(Typ.) @ IC = 120 A • Maximum Junction Temperature : TJ = 175°C • Positive Temperature Co−efficient • Tight Parameter Distribution • High Input Impedance • 100% of the Parts are Dynamically Tested • Short Circuit Ruggedness > 6 s 文件：481.25 Kbytes 页数：11 Pages	ONSEMI 安森美半导体	ONSEMI

更多FGY120T65SPD供应商更新时间2025-8-6 23:00:00