丝印：FGY160T65SPD；Package：TP-247-3LD；IGBT - Field Stop, Trench, Soft Fast Recovery Diode 650 V, 160 A

Benefits • Very Low Conduction and Switching Losses for a High Efficiency Operation in Various Applications • Rugged Transient Reliability • Outstanding Parallel Operation Performance with Balance Current Sharing • Low EMI Features • AEC−Q101 Qualified and PPAP Capable • Very Low Saturat

文件：3.43739 Mbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FGY160T65SPD；Package：TP-247-3LD；IGBT - Field Stop, Trench, Soft Fast Recovery Diode 650 V, 160 A

Benefits • Very Low Conduction and Switching Losses for a High Efficiency Operation in Various Applications • Rugged Transient Reliability • Outstanding Parallel Operation Performance with Balance Current Sharing • Low EMI Features • AEC−Q101 Qualified and PPAP Capable • Very Low Saturat

文件：3.43739 Mbytes 页数：10 Pages

ONSEMI

安森美半导体