丝印：FGH40N65UFDTU；Package：TO-247；IGBT - Field Stop 650 V, 40 A

Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Volt

文件：478.2 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FGH40N65UFDTU；Package：TO-247；IGBT - Field Stop 650 V, 40 A

Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Volt

文件：478.2 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FGH40N65UFD；Package：TO-247；IGBT - Field Stop 650 V, 40 A

Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Volt

文件：478.2 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

650V, 40A Field Stop IGBT

General Description Using novel field stop IGBT technology, Fairchild®’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE

文件：729.1 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司