丝印：FGH40T65SHD；Package：TO-247-3；IGBT - Field Stop, Trench 650 V, 40 A

文件：1.27362 Mbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：FGH40T65SHDF；Package：TO-247-3LD；IGBT - Field Stop, Trench 650 V, 40 A

Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction hea

文件：503.73 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：FGH40T65SHD；Package：TO-247-3；IGBT - Field Stop, Trench 650 V, 40 A

文件：1.27362 Mbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：FGH40T65SHDF；Package：TO-247-3LD；IGBT - Field Stop, Trench 650 V, 40 A

Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction hea

文件：503.73 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

IGBT - Field Stop, Trench 650 V, 40 A

Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction hea

文件：503.73 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

IGBT - Field Stop, Trench 650 V, 40 A

文件：1.27362 Mbytes 页数：9 Pages

ONSEMI

安森美半导体