Description

Using novel field stop IGBT technology, ON Semiconductor’s new

series of field stop 3rd generation IGBTs offer superior conduction

and switching performance and easy parallel operation. This device

is well suited for the resonant or soft switching application such as

induction heating and MWO.

Features

• Maximum Junction Temperature: TJ = 175°C

• Positive Temperature Co−efficient for Easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: VCE(sat) = 1.45 V(Typ.) @ IC = 40 A

• 100 of the Parts Tested for ILM (Note 1)

• High Input Impedance

• Fast Switching

• Tighten Parameter Distribution

• This Device is Pb−Free and is RoHS Compliant

Applications

• Induction Heating, MWO

FGH40T65SHDF属于分立半导体产品 > 晶体管 - UGBT、MOSFET - 单。安森美半导体公司制造生产的FGH40T65SHDF晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。