型号：FGH75T65SHD-F155；Package：TO-247-3LD；IGBT - Field Stop, Trench 650 V, 75 A

文件：1.26049 Mbytes 页数：9 Pages

ONSEMI

安森美半导体

型号：FGH75T65SHDTL4；Package：TO-247-4LD；IGBT - Field Stop, Trench 650 V, 75 A

Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Maximum

文件：575.32 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

型号：FGH75T65SHDT-F155；Package：TO-247-3LD；IGBT - Field Stop, Trench 650 V, 75 A

文件：2.196 Mbytes 页数：9 Pages

ONSEMI

安森美半导体

型号：FGH75T65SHD-F155；Package：TO-247-3LD；IGBT - Field Stop, Trench 650 V, 75 A

文件：1.26049 Mbytes 页数：9 Pages

ONSEMI

安森美半导体

型号：FGH75T65SHDTL4；Package：TO-247-4LD；IGBT - Field Stop, Trench 650 V, 75 A

Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Maximum

文件：575.32 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

型号：FGH75T65SHDT-F155；Package：TO-247-3LD；IGBT - Field Stop, Trench 650 V, 75 A

文件：2.196 Mbytes 页数：9 Pages

ONSEMI

安森美半导体

型号：FGH75T65SHD；IGBT - Field Stop, Trench 650 V, 75 A

文件：1.26049 Mbytes 页数：9 Pages

ONSEMI

安森美半导体

型号：FGH75T65SHDT；IGBT - Field Stop, Trench 650 V, 75 A

文件：2.196 Mbytes 页数：9 Pages

ONSEMI

安森美半导体

型号：FGH75T65SHDTLN4；IGBT - Field Stop, Trench IGBT - Field Stop, Trench

文件：465.39 Kbytes 页数：9 Pages

ONSEMI

安森美半导体