丝印：FGHL50T65；Package：TO-247-3L；IGBT - Field Stop, Trench 650 V, 50 A

文件：391.53 Kbytes 页数：9 Pages

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安森美半导体

丝印：FGHL50T65；Package：TO-247-3L；IGBT - Field Stop, Trench 650 V, 50 A

文件：391.53 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Field Stop Trench IGBT 50 A, 650 V

Field stop 4th generation Low VCE(Sat) IGBT technology and Full current rated copack Diode technology. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.15 V (Ty

文件：208.25 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Field Stop Trench IGBT 650 V, 50 A

Field stop 4th generation mid speed IGBT technology and full current rated copak Diode technology. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.45 V (Typ.)

文件：338.55 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Field Stop Trench IGBT 650 V, 50 A

Field stop 4th generation mid speed IGBT technology copacked with full rated current diode. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.45 V (Typ.) @ IC =

文件：417.91 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Field Stop Trench IGBT 650 V, 50 A

Field stop 4th generation mid speed IGBT technology copacked with full rated current diode. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.45 V (Typ.) @ IC =

文件：410.49 Kbytes 页数：10 Pages

ONSEMI

安森美半导体