P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V). Features • –9.2 A, –20 V. RDS(ON) = 12 mW @ V

文件：109.94 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

P-Channel 1.8V Specified PowerTrench MOSFET

文件：230.37 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

P-Channel 1.8V Specified PowerTrench MOSFET

文件：230.37 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

FAST RECOVERY RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.5 Amperes)

文件：24.49 Kbytes 页数：2 Pages

RECTRON

丽正国际

FAST RECOVERY RECTIFIER DIODES

PRV : 50 - 1000 Volts Io : 2.5 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency

文件：47.82 Kbytes 页数：2 Pages

EIC

FAST RECOVERY RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 2.5 Amperes Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Fast switching for high efficiency • Construction utilizes void-free molded plastic technique • 2.5 ampere operation at TA=85 with n

文件：199.8 Kbytes 页数：3 Pages

GOOD-ARK

固锝电子