P-Channel 1.5V PowerTrench짰 WL-CSP MOSFET

General Description Designed on Fairchilds advanced 1.5V PowerTrench process with state of the art low pitch WLCSP packaging process, the FDZ191P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine ex

文件：304.51 Kbytes 页数：7 Pages

Fairchild

仙童半导体

P-Channel 1.5V PowerTrenchTM WL-CSP MOSFET

General Description Designed on Fairchilds advanced 1.5V PowerTrench process with state of the art low pitch WLCSP packaging process, the FDZ191P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine ex

文件：352.32 Kbytes 页数：7 Pages

Fairchild

仙童半导体

P-Channel 1.5V PowerTrench짰 WL-CSP MOSFET

General Description Designed on Fairchilds advanced 1.5V PowerTrench process with state of the art low pitch WLCSP packaging process, the FDZ191P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine ex

文件：304.51 Kbytes 页数：7 Pages

Fairchild

仙童半导体

P 沟道，1.5V 指定，PowerTrench® WL-CSP MOSFET，-20V，-1A，85mΩ

FDZ191P的设计采用了飞兆先进的1.5 V PowerTrench工艺和一流的\"微间距\"WLCSP封装工艺，可最大限度地减少PCB空间和rDS(on)。 先进的WLCSP MOSFET彰显了封装技术的突破性进展，使该器件将卓越的传热特性、超薄型封装、低栅极电荷和低rDS(on)融合为一体。 . •最大rDS(on) = 85mΩ （VGS = -4.5V, ID = -1A）\n•最大 rDS(on) = 123 mΩ（VGS = -2.5 V、ID = -1 A 时）\n•最大 rDS(on) = 200 mΩ（VGS = -1.5 V、ID = -1 A 时）\n•仅占1.5mm²的PCB空间，比2 x 2 BGA所占空间少50%\n•超薄封装： 安装至PCB时，高度小于0.65 mm\n•符合 RoHS 标准;

ONSEMI

安森美半导体