P 沟道，-2.5V 指定，PowerTrench™ MOSFET，-20V，-0.15A，8Ω

此单P沟道MOSFET采用飞兆半导体先进的Power Trench工艺设计而成，优化了RDS(ON) @ VGS = -2.5v。 •-150 mA，20 V\n•RDS(ON) = 8 Ω @ VGS = -4.5 V\n•RDS(ON) = 12 Ω @ VGS = -2.5 V\n•静电放电(ESD)保护二极管（注3）\n•符合RoHS标准;

ONSEMI

安森美半导体

Single P-Channel (-2.5V) Specified PowerTrench MOSFET

文件：124.45 Kbytes 页数：6 Pages

Fairchild

仙童半导体

Fast recovery type

Features ● Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame RetardantEpoxy Molding Compound. ● For surface mounted applications. ● Exceeds environmental standards of MIL-S-19500 / 228 ● Low leakage current.

文件：68.87 Kbytes 页数：2 Pages

FORMOSA

美丽微半导体

1A FAST RECOVERY SMA DIODES

Surface MountGlass Passivated SuperFast Rectifiers Reverse Voltage 50 to 1000VForward Current 1.0A FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Hightemperature metallurgically bonded construction * Cavity-free glass passivate

文件：53.03 Kbytes 页数：2 Pages

LRC

乐山无线电

SURFACE MOUNT FAST RECOVERY RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere FEATURES ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● For surface mounted applications ● Fast switching for high efficiency ● Low reverse leakage ● Built-in stra

文件：684.87 Kbytes 页数：2 Pages

DIOTECH