Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V –12V). Features • –4.4 A, –20 V. RDS(ON) = 0.035 Ω

文件：451.09 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Dual P-Channel 2.5V Specified PowerTrench MOSFET

ONSEMI

安森美半导体

Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V –12V). Features • –4.4 A, –20 V. RDS(ON) = 0.035 Ω

文件：451.09 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V –12V). Features • –4.4 A, –20 V. RDS(ON) = 0.035 Ω

文件：87.78 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Dual P-Channel 2.5V Specified PowerTrench MOSFET

文件：145.13 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司