Dual N-Channel 2.5V Specified PowerTrench MOSFET

General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • 5.5 A, 20 V. RDS(ON) = 0.021 Ω @

文件：165.82 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

Dual N-Channel 2.5V Specified PowerTrench MOSFET

ONSEMI

安森美半导体

Dual N-Channel 2.5V Specified PowerTrench MOSFET

General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • 5.5 A, 20 V. RDS(ON) = 0.021 Ω @

文件：165.82 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

Dual N-Channel 2.5V Specified PowerTrench MOSFET

General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features ● 5.5 A, 20 V. RDS(ON) = 20 mW

文件：73.37 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

Dual N-Channel 2.5V Specified PowerTrench MOSFET

文件：371.63 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

Dual N-Channel 2.5V Specified PowerTrench MOSFET

文件：371.63 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体