P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • –9.7 A, –20 V. RDS(ON) = 10.0 mΩ

文件：153 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P-Channel 2.5V Specified PowerTrench MOSFET

ONSEMI

安森美半导体

23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100KRAD(Si) and 1000KRAD(Si) with neutron hardness

文件：48.14 Kbytes 页数：6 Pages

Intersil

23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100KRAD(Si) and 1000KRAD(Si) with neutron hardness

文件：48.14 Kbytes 页数：6 Pages

Intersil

23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100KRAD(Si) and 1000KRAD(Si) with neutron hardness

文件：48.14 Kbytes 页数：6 Pages

Intersil