Single N-Channel 2.5V Specified PowerTrench MOSFET

General Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v. Features • 600 mA, 20 V RDS(ON) = 700 mW @ VGS = 4.5 V RDS(ON) = 850 mW @ VGS = 2.5 V • ESD protection diode (note 3) • RoHS C

文件：182.72 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

Single N-Channel 2.5V Specified PowerTrench MOSFET

文件：270.81 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

Single N-Channel 2.5V Specified PowerTrench MOSFET

文件：270.81 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

N 沟道，2.5V 指定，PowerTrench® MOSFET，20V，0.6A，0.7Ω

此单N沟道MOSFET采用飞兆半导体先进的Power Trench工艺设计，用以优化RDS(ON) @ VGS = 2.5v。 •600 mA，20 V\n•RDS(ON) = 700 mΩ @ VGS = 4.5 V\n•RDS(ON) = 850 mΩ @ VGS = 2.5 V\n• ESD Protection Diode (note 3)\n• RoHS Compliant;

ONSEMI

安森美半导体