150V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(O

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FAIRCHILD

仙童半导体

150V N-Channel PowerTrench MOSFET

文件：200.77 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

150V N-Channel PowerTrench

General Description\nThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) · 4.1 A, 150 V. Rds(on) = 78mW@ Vgs= 10V\n                      Rds(on) = 88mW@ Vgs= 6.0V\n· High performance trench technology for extremely low Rds(on)\n· High power and current handling capability\n· Fast switching, low gate charge (38nC typical)\n· FLMP SO-8 package: Enhanced thermal\nperformanc;

ONSEMI

安森美半导体

SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • 20 Amps Total (10 Amps Per Diode Leg) • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temper

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MOTOROLA

摩托罗拉

LOW VOLTAGE POWER AMPLIFIER

文件：127.85 Kbytes 页数：4 Pages

NJRC

日本无线

LOW VOLTAGE POWER AMPLIFIER

文件：127.85 Kbytes 页数：4 Pages

NJRC

日本无线