IIRLR3717

Marking：DPAK；Package：TO-252；N-Channel MOSFET Transistor

•DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤4mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

IIRLR7807Z

Marking：DPAK；Package：TO-252；N-Channel MOSFET Transistor

•DESCRITION •HighFrequencySynchronousBuckConvertersForComputerProcessorPower •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤13.8mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

IIRLR8721

Marking：DPAK；Package：TO-252；N-Channel MOSFET Transistor

DESCRIPTION •HighDCCurrentGain-hFE=750(Min)@IC=15A •HighCollector-EmitterSustainingVoltage- :VCEO(SUS)=100V(Min) •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforgeneralpurposeamplifierandlowspeed s

IRFR1N60A

Marking：DPAK；Package：TO-252；iscN-Channel MOSFET Transistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=7Ω(MAX) •Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

IRFRC20

Marking：DPAK；Package：TO-252；iscN-Channel MOSFET Transistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=4.4Ω(MAX) •Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCD1836

Marking：DPAK；Package：TO-252；isc P-Channel MOSFET Transistor

•DESCRITION •175°Coperatingjunctiontemperature •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤4.2mΩ(@VGS=-10V;ID=-70A) •Enhancementmode •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISL9000IRJMZ

Marking：DPAA；Package：10Ld3x3DFN；Dual LDO with Low Noise, Very High PSRR and Low IQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanind

ISPD02N50C3

Marking：DPAK；Package：TO-252；N-Channel MOSFET Transistor

•DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISPD02N60C3

Marking：DPAK；Package：TO-252；N-Channel MOSFET Transistor

•DESCRITION •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISPD02N60S5

Marking：DPAK；Package：TO-252；N-Channel MOSFET Transistor

•DESCRITION •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation