ISPD02N80C3

Marking：DPAK；Package：TO-252；N-Channel MOSFET Transistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤2.7Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISPD03N50C3

Marking：DPAK；Package：TO-252；N-Channel MOSFET Transistor

•DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISPD03N60C3

Marking：DPAK；Package：TO-252；N-Channel MOSFET Transistor

•DESCRITION •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISPD03N60S5

Marking：DPAK；Package：TO-252；N-Channel MOSFET Transistor

•DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISPD04N50C3

Marking：DPAK；Package：TO-252；N-Channel MOSFET Transistor

•DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.95Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISPD04N60C3

Marking：DPAK；Package：TO-252；N-Channel MOSFET Transistor

•DESCRITION •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.95Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISPD04N80C3

Marking：DPAK；Package：TO-252；N-Channel MOSFET Transistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISPD06N60C3

Marking：DPAK；Package：TO-252；N-Channel MOSFET Transistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.75Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISPD06N80C3

Marking：DPAK；Package：TO-252；N-Channel MOSFET Transistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.9Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISPD07N20G

Marking：DPAK；Package：TO-252；N-Channel MOSFET Transistor

•DESCRITION •Idealforhigh-frequencyswitchingandsynchronousrectification •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation