TPSMBJ70CA

Marking：DPA；Package：DO-214AA；11 To 170V 600W Surface Mount Transient Voltage Suppressors

Features Glasspassivatedchip 600Wpeakpulsepowercapabilitywitha10/1000μs waveform,repetitiverate(dutycycle):0.01% HighreliabilityapplicationandautomotivegradeAECQ101 qualified Lowleakage UniandBidirectionalunit Excellentclampingcapability Veryfastresponseti

TPSMBJ70CA

Marking：DPA；Package：DO-214AA；Surface Mount Transient Voltage Suppressors

TPSMBJ70CA

Marking：DPA；Package：DO-214AA；Surface Mount Transient Voltage Suppressors

2SA1358-Z

Marking：DPAK；Package：TO-252；isc Silicon PNP Power Transistor

DESCRIPTION •WithTO-252(DPAK)packaging •ExcellentlinearityofhFE •Lowcollector-to-emittersaturationvoltage •Fastswitchingspeed •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforaudiofrequencypoweramplifierap

2SA1385-Z

Marking：DPAK；Package：TO-252；isc Silicon PNP Power Transistor

DESCRIPTION •HighCollector-EmitterBreakdownVoltage:V(BR)CEO=-60V(Min) •ExcellentlinearityofhFE •Lowcollector-to-emittersaturationvoltage •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Designedforaudiofrequencypowerampli

2SA1412-Z

Marking：DPAK；Package：TO-252；isc Silicon NPN Power Transistor

DESCRIPTION •WithTO-252(DPAK)packaging •ExcellentlinearityofhFE •Lowcollector-to-emittersaturationvoltage •Fastswitchingspeed •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Relaydrivers •High-speedinverters •Conver

2SA1413-Z

Marking：DPAK；Package：TO-252；isc Silicon PNP Power Transistor

DESCRIPTION •WithTO-252(DPAK)packaging •Largecollectorcurrent •Lowcollectorsaturationvoltage •Highpowerdissipation •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •DesignedforuseinDC-DCconverter •Driverofsolenoido

2SB1261-Z

Marking：DPAK；Package：TO-252；isc Silicon PNP Power Transistors

DESCRIPTION •LowCollectorSaturationVoltage •HighPowerDissipation- :PC=10W(Max)@TC=25℃ •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforuseinaudioamplifierandswitching, especiallyinhybridintegratedcir

2SB963-Z

Marking：DPAK；Package：TO-252；isc Silicon PNP Darlington Power Transistor

DESCRIPTION •WithTO-252(DPAK)packaging •VeryhighDCcurrentgain •Monolithicdarlingtontransistorwithintegrated antiparallelcollector-emitterdiode •Complementtotype2SD1286-Z •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIO

2SC3588-Z

Marking：DPAK；Package：TO-252；isc Silicon NPN Power Transistor

DESCRIPTION •LowCollectorSaturationVoltage VCE(sat)=0.5V(Max)@IC=300mA •HighCollector-EmitterBreakdownVoltage V(BR)CEO=400V(Min) •ComplementtoType2SA1400-Z •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designed