FDD3682

Marking：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

•DESCRITION •DC-DCConvertersandoff-lineUPS •HighVoltageSynchronousRectifier •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤36mΩ •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

FTD1760

Marking：DPAK；TRANSISTOR (NPN)

TRANSISTOR(NPN) FEATURES ●LowVCE(sat).VCE(sat)=0.5V(Typ.)(IC/IB=2A/0.2A) ●ComplementstheFTB1184.

FTD1899

Marking：DPAK；TRANSISTOR (NPN)

TRANSISTOR(NPN) FEATURES ●LowVCE(sat) ●HighTransitionFrequency

IIPD075N03L

Marking：DPAK；Package：TO-252；N-Channel MOSFET Transistor

•DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤7.5mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

IIPD090N03L

Marking：DPAK；Package：TO-252；N-Channel MOSFET Transistor

•DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤9mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

IIPD50R399CP

Marking：DPAK；Package：T0-252；N-Channel MOSFET Transistor

•DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤399mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

IIPD50R500CE

Marking：DPAK；Package：T0-252；N-Channel MOSFET Transistor

•DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤500mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

IIPD50R520CP

Marking：DPAK；Package：T0-252；N-Channel MOSFET Transistor

•DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤520mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

IIPD600N25N3

Marking：DPAK；Package：TO-252；N-Channel MOSFET Transistor

•DESCRITION •Highfrequencyswitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤60mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

IIPD60R180C7

Marking：DPAK；Package：TO-252；N-Channel MOSFET Transistor

•DESCRITION •Suitableforhardandsoftswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.18Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation