丝印：DPAK；Package：TO-252；isc Silicon PNP Power Transistor

DESCRIPTION • With TO-252(DPAK) packaging • Excellent linearity of hFE • Low collector-to-emitter saturation voltage • Fast switching speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for audio frequency power amplifier ap

文件：354.04 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage : V(BR)CEO = -120V(Min) • Complement to Type 2SC3421 APPLICATIONS • Designed for audio frequency poweramplifier applications.

文件：179.81 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon PNP Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage : V(BR)CEO = -120V(Min) • Complement to Type 2SC3421 APPLICATIONS • Designed for audio frequency poweramplifier applications. • Suitable for driver of 60 to 80 Watts audio amplifier.

文件：105.07 Kbytes 页数：2 Pages

ISC

无锡固电

Audio Frequency Power Amplifier Applications

文件：120.84 Kbytes 页数：4 Pages

TOSHIBA

东芝