PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3???

DESCRIPTION The 2SA1413-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage: VCEO = −600 V • High Speed: tf ≤ 1.0 μs • Complement to 2SC3632-Z

文件：271.7 Kbytes 页数：6 Pages

NEC

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丝印：DPAK；Package：TO-252；isc Silicon PNP Power Transistor

DESCRIPTION • With TO-252(DPAK) packaging • Large collector current • Low collector saturation voltage • High power dissipation • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in DC-DC converter • Driver of solenoid o

文件：373.8 Kbytes 页数：2 Pages

ISC

无锡固电

PNP Silicon Transistor

■Features ● High Voltage:VCEO=-600V ● High Speed : tf ≤ 1us ● Complement to 2SC3632-Z

文件：41.63 Kbytes 页数：2 Pages

KEXIN

科信电子

SILICON POWER TRANSISTOR

文件：927.8 Kbytes 页数：7 Pages

RENESAS

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PNP SILICON TRIPLE DIFFUSED TRANSISTOR

文件：927.8 Kbytes 页数：7 Pages

RENESAS

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PNP Transistors

文件：1.39437 Mbytes 页数：3 Pages

KEXIN

科信电子

PNP Transistors

文件：1.39437 Mbytes 页数：3 Pages

KEXIN

科信电子

PNP Transistors

文件：1.39437 Mbytes 页数：3 Pages

KEXIN

科信电子

PNP Transistors

文件：1.39437 Mbytes 页数：3 Pages

KEXIN

科信电子

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SA1413-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. • High Voltage: VCEO = −600 V\n• High Speed: tf =≤ 1.0 μs\n• Complement to 2SC3632-Z;

Renesas

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