丝印：DPAK；Package：TO-252；isc Silicon PNP Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min) • Excellent linearity of hFE • Low collector-to-emitter saturation voltage • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for audio frequency power ampli

文件：353.28 Kbytes 页数：2 Pages

ISC

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Silicon PNP Epitaxia

Features • Low VCE(sat):VCE(sat)=-0.18 V TYP.

文件：40.99 Kbytes 页数：1 Pages

KEXIN

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PNP SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SA1385-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • Low VCE(sat): VCE(sat) = −0.18 V TYP. • Complement to 2SC3518-Z ​​​​​​​

文件：235.82 Kbytes 页数：4 Pages

NEC

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SILICON POWER TRANSISTOR

文件：796.51 Kbytes 页数：6 Pages

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PNP SILICON EPITAXIAL TRANSISTOR

文件：796.51 Kbytes 页数：6 Pages

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文件：1.59822 Mbytes 页数：3 Pages

KEXIN

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Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SA1385-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. • Low VCE(sat): VCE(sat) = −0.18 V TYP.\n• Complement to 2SC3518-Z;

Renesas

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