PNP SILICON EPITAXIAL DARLINGTON TRANSISTOR MP-3?

DESCRIPTION 2SB963-Z is designed for switching, especially in Hybrid integrated Circuits FEATURES ● High Gain hFE = 2000 to 3000 ● Complement to 2SD1286-Z

文件：219 Kbytes 页数：4 Pages

NEC

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SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) DESCRIPTION The 2SB963-Z is designed for switching, especially in Hybrid FEATURES • High Gain hFE = 2000 to 3000 • Complement to 2SD1286-Z

文件：739.18 Kbytes 页数：6 Pages

RENESAS

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丝印：DPAK；Package：TO-252；isc Silicon PNP Darlington Power Transistor

DESCRIPTION • With TO-252(DPAK) packaging • Very high DC current gain • Monolithic darlington transistor with integrated antiparallel collector-emitter diode • Complement to type 2SD1286-Z • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO

文件：303.17 Kbytes 页数：2 Pages

ISC

无锡固电

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)

文件：739.78 Kbytes 页数：6 Pages

RENESAS

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Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SB963-Z is designed for switching, especially in Hybrid Integrated Circuits. • High Gain hFE = 2000 to 3000\n• Complement to 2SD1286-Z;

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