N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Footprint of just 0.6mm2 – Thirteen Times Smaller than SOT23  0.4mm Profile – Ideal for Low Profile Applications  Low Gate Threshold Voltage  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green”

文件：483.91 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：45；Package：X2-DFN1006-3；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Footprint of just 0.6mm2 – Thirteen Times Smaller than SOT23  0.4mm Profile – Ideal for Low Profile Applications  Low Gate Threshold Voltage  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green”

文件：483.91 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：45；Package：X2-DFN1006-3；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Footprint of just 0.6mm2 – Thirteen Times Smaller than SOT23  0.4mm Profile – Ideal for Low Profile Applications  Low Gate Threshold Voltage  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green”

文件：483.91 Kbytes 页数：8 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Diodes

美台半导体