DMN2710UDW

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ComplementaryPairMOSFET Ultra-SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntim

DMN2710UDW-13

Marking：BD1；Package：SOT363；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ComplementaryPairMOSFET Ultra-SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntim

DMN2710UDW-7

Marking：BD1；Package：SOT363；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ComplementaryPairMOSFET Ultra-SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntim

DS2710

Single-CellNiMHCharger

GeneralDescription TheDS2710isidealforin-systemchargingofsingle-cellnickelmetalhydride(NiMH)cellsforlow-currentportableapplications.InputstotheDS2710includeUSBvoltagesourcesand5Vregulatedadapters.Temperature,voltage,andchargetimearemonitoredtoprovideproper

DS2710G

Single-CellNiMHCharger

GeneralDescription TheDS2710isidealforin-systemchargingofsingle-cellnickelmetalhydride(NiMH)cellsforlow-currentportableapplications.InputstotheDS2710includeUSBvoltagesourcesand5Vregulatedadapters.Temperature,voltage,andchargetimearemonitoredtoprovideproper

DS2710G+

Single-CellNiMHCharger

GeneralDescription TheDS2710isidealforin-systemchargingofsingle-cellnickelmetalhydride(NiMH)cellsforlow-currentportableapplications.InputstotheDS2710includeUSBvoltagesourcesand5Vregulatedadapters.Temperature,voltage,andchargetimearemonitoredtoprovideproper

EVBUM2710

USBType-CSourceControllerSupportingUSBPowerDelivery3.0w/PPSanda4-SwitchBuckBoostControllerEvaluationBoard

EVBUM2710D

USBType-CSourceControllerSupportingUSBPowerDelivery3.0w/PPSanda4-SwitchBuckBoostControllerEvaluationBoard

FDB2710

250VN-ChannelPowerTrenchMOSFET

FDB2710

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=50A@TC=25℃ ·DrainSourceVoltage :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=42.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC