N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Very low Gate Threshold Voltage, 1.0V Max.  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2451UFDQ is suitable for auto

文件：583.16 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：CN2；Package：U-DFN1212-3；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Very low Gate Threshold Voltage, 1.0V Max.  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2451UFDQ is suitable for auto

文件：583.16 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：CN2；Package：U-DFN1212-3；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Very low Gate Threshold Voltage, 1.0V Max.  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2451UFDQ is suitable for auto

文件：583.16 Kbytes 页数：8 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making itideal for high-efficiency power management applications.

Diodes

美台半导体