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CEF09N6

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.

文件:87.32 Kbytes 页数:4 Pages

CET

华瑞

CEF09N7A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

文件:237.13 Kbytes 页数:4 Pages

CET

华瑞

CEF09N7G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

文件:402.7 Kbytes 页数:4 Pages

CET

华瑞

CEF09N7G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件:652.15 Kbytes 页数:4 Pages

CET-MOS

华瑞

CEF10N4

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. Lead free product is acquired.

文件:875.51 Kbytes 页数:4 Pages

CET-MOS

华瑞

CEF10N4

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ​​​​​​​■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.

文件:87.64 Kbytes 页数:4 Pages

CET

华瑞

CEF10N4

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ​​​​​​​■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.

文件:41.82 Kbytes 页数:5 Pages

CET

华瑞

CEF10N6

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

文件:627.14 Kbytes 页数:4 Pages

CET-MOS

华瑞

CEF10N65

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件:733.35 Kbytes 页数:4 Pages

CET-MOS

华瑞

CEF1175

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

文件:397.54 Kbytes 页数:4 Pages

CET

华瑞

技术参数

  • BVDSS(V):

    650

  • Rds(on)mΩ@10V:

    10500

  • ID(A):

    1.3

  • Qg(nC)@10V(typ):

    6.9

  • RθJC(℃/W):

    4.5

  • Pd(W):

    27

  • Configuration:

    Single

  • Polarity:

    N

供应商型号品牌批号封装库存备注价格
CET
23+
TOP/3A
7000
绝对全新原装!100%保质量特价!请放心订购!
询价
CET
25+
DIP-14
18000
原厂直接发货进口原装
询价
PH
23+
SOP-28
5000
原装正品,假一罚十
询价
TAITIE
25+
N/A
636
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
CET
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价
CET
17+
TO-220F
6200
询价
TAITIEN
16+
NA
8800
原装现货,货真价优
询价
CET
24+
5000
询价
CET
24+
TO-220F
5000
全现原装公司现货
询价
PHI
25+
SOP28W
3629
原装优势!房间现货!欢迎来电!
询价
更多CEF供应商 更新时间2026-1-17 16:31:00