P-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Pb-free lead plating ; RoHS compliant. Halogen Free. Applications Switched mode power supplies. Lighting. DC Motor control. Load switch. battery powered.

文件：518.96 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. Fast reverse recovery time(Trr). Drive circuits can be simple. APPLICATIONS Sever and telecom power supplies. String PV inverters.

文件：695.48 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：530.76 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. Fast reverse recovery time.

文件：512.97 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Pb-free lead plating ; RoHS compliant. Halogen Free. Applications Synchronous rectification . DC/DC converter.

文件：483 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：490.68 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：410.46 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：443.29 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Fast reverse recovery time. Pb-free lead plating ; RoHS compliant. Halogen Free.

文件：526.46 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 36A, RDS(ON) = 50mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. RDS(ON) = 53mW @VGS = 5V.

文件：633.43 Kbytes 页数：4 Pages

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