CEF46N65SF说明书PDF资料原装现货华瑞-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CEF46N65SF	文件：526.46 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Fast reverse recovery time. Pb-free lead plating ; RoHS compliant. Halogen Free. 文件：526.46 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEF46N65SF	文件：300 bytes Page：1 Pages	N Channel MOSFET	CET 华瑞	CET
CEP46N65S	文件：443.29 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：443.29 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEP46N65SF	文件：526.46 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Fast reverse recovery time. Pb-free lead plating ; RoHS compliant. Halogen Free. 文件：526.46 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEW46N65S	文件：446.11 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V@TJ max, 46.7A, RDS(ON) = 56mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-247 package. RoHS compliant. 文件：446.11 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS

更多CEF46N65SF供应商更新时间2025-10-6 10:34:00