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CEF14P20A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Pb-free lead plating ; RoHS compliant. Halogen Free. Applications Switched mode power supplies. Lighting. DC Motor control. Load switch. battery powered.

文件:452.94 Kbytes 页数:5 Pages

CET-MOS

华瑞

CEF1588S

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件:435.45 Kbytes 页数:5 Pages

CET-MOS

华瑞

CEF15N60LN

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件:532.82 Kbytes 页数:5 Pages

CET-MOS

华瑞

CEF15N60SA

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件:449.69 Kbytes 页数:5 Pages

CET-MOS

华瑞

CEF15P15

P-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件:614.44 Kbytes 页数:4 Pages

CET-MOS

华瑞

CEF16N6

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件:668.66 Kbytes 页数:4 Pages

CET-MOS

华瑞

CEF170N10S

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件:516.76 Kbytes 页数:5 Pages

CET-MOS

华瑞

CEF18N5

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件:495.94 Kbytes 页数:4 Pages

CET-MOS

华瑞

CEF18N5A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件:445.82 Kbytes 页数:5 Pages

CET-MOS

华瑞

CEF200N15

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件:514.57 Kbytes 页数:5 Pages

CET-MOS

华瑞

技术参数

  • BVDSS(V):

    650

  • Rds(on)mΩ@10V:

    10500

  • ID(A):

    1.3

  • Qg(nC)@10V(typ):

    6.9

  • RθJC(℃/W):

    4.5

  • Pd(W):

    27

  • Configuration:

    Single

  • Polarity:

    N

供应商型号品牌批号封装库存备注价格
CET
23+
TOP/3A
7000
绝对全新原装!100%保质量特价!请放心订购!
询价
CET
25+
DIP-14
18000
原厂直接发货进口原装
询价
PH
23+
SOP-28
5000
原装正品,假一罚十
询价
TAITIE
25+
N/A
636
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
CET
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价
CET
17+
TO-220F
6200
询价
TAITIEN
16+
NA
8800
原装现货,货真价优
询价
CET
24+
5000
询价
CET
24+
TO-220F
5000
全现原装公司现货
询价
PHI
25+
SOP28W
3629
原装优势!房间现货!欢迎来电!
询价
更多CEF供应商 更新时间2026-1-18 10:51:00