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CEF02N6G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

文件:398.08 Kbytes 页数:4 Pages

CET

华瑞

CEF02N6G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

文件:599.54 Kbytes 页数:4 Pages

CET-MOS

华瑞

CEF02N7

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. Lead free product is acquired.

文件:134.8 Kbytes 页数:4 Pages

CET

华瑞

CEF02N7G

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

文件:403.86 Kbytes 页数:4 Pages

CET

华瑞

CEF02N7G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

文件:625.85 Kbytes 页数:4 Pages

CET-MOS

华瑞

CEF02N9

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件:623.18 Kbytes 页数:4 Pages

CET-MOS

华瑞

CEF03N100

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Pb-free lead plating ; RoHS compliant. Halogen Free.

文件:518.78 Kbytes 页数:5 Pages

CET-MOS

华瑞

CEF03N8

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.

文件:444.05 Kbytes 页数:4 Pages

CET-MOS

华瑞

CEF04N100

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件:497.84 Kbytes 页数:5 Pages

CET-MOS

华瑞

CEF04N6

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件:626.36 Kbytes 页数:4 Pages

CET-MOS

华瑞

技术参数

  • BVDSS(V):

    650

  • Rds(on)mΩ@10V:

    10500

  • ID(A):

    1.3

  • Qg(nC)@10V(typ):

    6.9

  • RθJC(℃/W):

    4.5

  • Pd(W):

    27

  • Configuration:

    Single

  • Polarity:

    N

供应商型号品牌批号封装库存备注价格
CET
23+
TOP/3A
7000
绝对全新原装!100%保质量特价!请放心订购!
询价
CET
25+
DIP-14
18000
原厂直接发货进口原装
询价
PH
23+
SOP-28
5000
原装正品,假一罚十
询价
TAITIE
25+
N/A
636
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
CET
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价
CET
17+
TO-220F
6200
询价
TAITIEN
16+
NA
8800
原装现货,货真价优
询价
CET
24+
5000
询价
CET
24+
TO-220F
5000
全现原装公司现货
询价
PHI
25+
SOP28W
3629
原装优势!房间现货!欢迎来电!
询价
更多CEF供应商 更新时间2025-12-1 16:31:00