| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
CEF02N6G | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  | |
CEF02N6G | N-Channel Enhancement Mode Field Effect Transistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 |  | |
N-CHANNELLOGICLEVELENHANCEMENTMODEFIELDEFFECTTRANSISTOR FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-ChannelEnhancementModeFieldEffectTransistor | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ●600V,1.9A,RDS(ON)=5Ω@VGS=10V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,1.3A,RDS(ON)=8Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,1.3A,RDS(ON)=8.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,2A,RDS(ON)=5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■600V,2A,RDS(ON)=5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■600V,1.3A,RDS(ON)=8.5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-126package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,1.3A,RDS(ON)=8.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-126package. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,2.0A,RDS(ON)=5.0W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-126package. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■600V,2.0A,RDS(ON)=5.0Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-126package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-ChannelEnhancementModeFieldEffectTransistor | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |
详细参数
- 型号：
CEF02N6G
- 制造商：
CET
- 制造商全称：
Chino-Excel Technology
- 功能描述：
N-Channel Enhancement Mode Field Effect Transistor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
N/A |
90650 |
正品授权货源可靠 |
询价 | |||
VB |
2019 |
TO-220F |
55000 |
绝对原装正品假一罚十! |
询价 | ||
CET |
2020+ |
TO-220F |
51280 |
公司代理品牌,原装现货超低价清仓! |
询价 | ||
CET |
21+ |
TO-220F |
35200 |
一级代理/放心采购 |
询价 | ||
AIC/沛亨 |
23+ |
SOT-23 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
CET(华瑞) |
2112+ |
TO-220F(TO-220IS) |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
CET/華瑞 |
23+ |
TO-220F |
10000 |
公司只做原装正品 |
询价 | ||
CET/華瑞 |
2022+ |
TO-220F |
50000 |
原厂代理 终端免费提供样品 |
询价 | ||
CET/華瑞 |
21+ROHS |
TO-220F |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
C |
23+ |
TO-220F |
6000 |
原装正品，支持实单 |
询价 |
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