N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

文件：398.08 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

文件：599.54 Kbytes 页数：4 Pages

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N Channel MOSFET

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N-Channel Enhancement Mode Field Effect Transistor

文件：132.65 Kbytes 页数：4 Pages

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N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ​​​​​​​■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.

文件：75.08 Kbytes 页数：5 Pages

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N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● 600V , 1.9A , RDS(ON)=5Ω @VGS=10V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-251 & TO-252 package.

文件：44.81 Kbytes 页数：5 Pages

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