CEI02N6规格书应用电路行情报价华瑞CET-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
CEI02N6	文件：132.65 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEI02N6A	文件：125.19 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEB02N6	文件：75.08 Kbytes Page：5 Pages	N-CHANNELLOGICLEVELENHANCEMENTMODEFIELDEFFECTTRANSISTOR FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEB02N6	文件：132.65 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEB02N6A	文件：125.19 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEB02N6A	文件：592.86 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB02N6G	文件：599.54 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB02N6G	文件：398.08 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CED02N6	文件：44.81 Kbytes Page：5 Pages	N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ●600V,1.9A,RDS(ON)=5Ω@VGS=10V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CED02N6A	文件：123.74 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,1.3A,RDS(ON)=8Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CED02N6A	文件：609.09 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,1.3A,RDS(ON)=8.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED02N6G	文件：615.01 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,2A,RDS(ON)=5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED02N6G	文件：423.36 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■600V,2A,RDS(ON)=5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEE02N6A	文件：461.29 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■600V,1.3A,RDS(ON)=8.5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-126package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEE02N6A	文件：721.46 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,1.3A,RDS(ON)=8.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-126package. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEE02N6G	文件：723.02 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,2.0A,RDS(ON)=5.0W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-126package. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEE02N6G	文件：462.09 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■600V,2.0A,RDS(ON)=5.0Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-126package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEF02N6	文件：45.44 Kbytes Page：5 Pages	N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEF02N6	文件：132.65 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEF02N6A	文件：125.19 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET

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详细参数

型号：
CEI02N6
制造商：
CET
制造商全称：
Chino-Excel Technology
功能描述：
N-Channel Enhancement Mode Field Effect Transistor

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市永贝尔科技有限公司	CEI02N6	CET	23+	原厂原包	19960	只做进口原装终端工厂免费送样	询价
深圳市百视威讯电子科技有限公司	CEI-120		23+	N/A	49200	正品授权货源可靠	询价
深圳市科恒伟业电子有限公司	CEI-120	SUMIDA	1948+	SMD	6852	只做原装正品现货!或订货假一赔十!	询价
深圳兆威电子有限公司	CEI-120	SUMIDA	20+	131106	90000	原装正品现货/价格优势	询价
深圳市汇莱威科技有限公司	CEI-120	SUMIDA		SMD10	265209	假一罚十原包原标签常备现货!	询价
深圳市威尔健半导体有限公司	CEI-120	SUMIDA	23+	SMD10	50000	全新原装正品现货,支持订货	询价
深圳市英瑞尔电子科技有限公司	CEI-120	SUMIDA	22+	SMD	598000	原装现货假一赔十	询价
深圳廊盛科技有限公司	CEI-120	SUMIDA	2022	SMD10	80000	原装现货,OEM渠道,欢迎咨询	询价
深圳市东来宝电子科技有限公司	CEI-120	SUMIDA/胜美达	22+	SMD10	62420	郑重承诺只做原装进口现货	询价
深圳市得捷芯城科技有限公司	CEI-120	SUMIDA	23+	NA/	500	优势代理渠道,原装正品,可全系列订货开增值税票	询价

更多CEI02N6供应商更新时间2024-4-29 8:00:00

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