| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
PowerMOSFET60Amps,60Volts,LogicLevelN?묬hannelTO??20andD2PAK | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PowerMOSFET60Amps,60Volts,LogicLevelN?묬hannelTO??20andD2PAK | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET–Power,N-Channel,D2PAK60V,60A Designedforlowvoltage,highspeedswitchingapplicationsin powersupplies,convertersandpowermotorcontrolsandbridge circuits. Features •AEC−Q101QualifiedandPPAPCapable−NVB60N06 •TheseDevicesarePb−FreeandareRoHSCompliant TypicalApplications •PowerSupplies •C | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
LOWVOLTAGE,LOWRDS(on)POWERMOSFETSINHERMETICISOLATEDPACKAGE DESCRIPTION ThisseriesofhermeticpackagedMOSFETsareideallysuitedforlowvoltageapplications;batterypoweredvoltagepowersupplies,motorcontrols,dctodcconvertersandsynchronousrectification.Thelowconductionlossallowssmallerheatsinkingandthelowgatechargesimplerdr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.0172 ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■VERYLOWRDS(on) ■APPLICATIONORIENTED CHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEE | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP60N06LTissu | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP60N06LTissu | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconvertersa | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
60VN-ChannelEnhancementModeMOSFET | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
60VN-ChannelEnhancementModeMOSFET | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
50A,60V,0.022Ohm,LogicLevelN-ChannelPowerMOSFETs TheseN-ChannelenhancementmodepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
AutomotiveN-Channel60V(D-S)175째CMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
NCHANNELPOWERMOSFETS | SamsungSamsung Group 三星三星半导体 | Samsung | ||
N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.0172 ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■VERYLOWRDS(on) ■APPLICATIONORIENTED CHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEE | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.0172 ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■VERYLOWRDS(on) ■APPLICATIONORIENTED CHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEE | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-Channel60-V(D-S),175CMOSFET N-Channel60-V(D-S),175°CMOSFET 175°CRatedMaximumJunctionTemperature TrenchFET®PowerMOSFETs ProductSummary V(BR)DSS 60V rDS(on) 0.018Ω ID 60A | VishayVishay Siliconix 威世科技 | Vishay | ||
N-channelTO-220MOSFET | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
60VN-ChannelPowerMOSFET | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC | ||
60VN-ChannelPowerMOSFET | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC |
详细参数
- 型号：
CEB60N06G
- 制造商：
CET
- 制造商全称：
Chino-Excel Technology
- 功能描述：
N-Channel Enhancement Mode Field Effect Transistor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
19+ |
TO-263 |
2500 |
原装正品现货假一罚十 |
询价 | ||
CET/華瑞 |
24+ |
TO-263 |
156579 |
明嘉莱只做原装正品现货 |
询价 | ||
23+ |
N/A |
48700 |
正品授权货源可靠 |
询价 | |||
CET |
2020+ |
TO-263 |
49080 |
公司代理品牌,原装现货超低价清仓! |
询价 | ||
VBsemi |
21+ |
TO-263(S) |
15500 |
询价 | |||
CET/華瑞 |
23+ |
TO-263 |
10000 |
公司只做原装正品 |
询价 | ||
VBSEMI/台湾微碧 |
23+ |
TO-263(S) |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VBsemi |
21+ |
TO263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
CET/華瑞 |
2022+ |
TO-263 |
32500 |
原厂代理 终端免费提供样品 |
询价 | ||
VB |
TO-263(S) |
68900 |
原包原标签100%进口原装常备现货! |
询价 |
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