TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

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PHI

PHI

TrenchMOS transistor Standard level FET

恩XP

60V N-Channel Enhancement Mode MOSFET

文件：385.14 Kbytes 页数：8 Pages

PANJIT

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60V N-Channel Enhancement Mode MOSFET

文件：409.71 Kbytes 页数：8 Pages

PANJIT

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60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

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PANJIT

強茂