TrenchMOS Standard Level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Product availability: PHP83N06T in SOT78 (TO-220AB). Features ■ TrenchMOS™ technology ■ Fast switching ■ Low on-state resistanc

文件：263.58 Kbytes 页数：13 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 12mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.08 Kbytes 页数：2 Pages

ISC

无锡固电

TrenchMOS Standard Level FET

恩XP

con

NEXPERIA

安世

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N/A

JST

JST集团

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