TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

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PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 63A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.2 Kbytes 页数：2 Pages

ISC

无锡固电

Drain Current ?밒D=63A@ TC=25C

文件：136.98 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power MOSFET

文件：644.19 Kbytes 页数：8 Pages

NELLSEMI

尼尔半导体

isc N-Channel MOSFET Transistor

文件：316.09 Kbytes 页数：2 Pages

ISC

无锡固电