N-channel TrenchMOS transistor

VDSS = 200 V ID = 8.7 A RDS(ON) ≤ 400 mΩ GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits a

文件：110.93 Kbytes 页数：12 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.16Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：373 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.2A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：318.92 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS transistor

VDSS = 200 V ID = 5.2 A RDS(ON) ≤ 400 mΩ GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control

文件：113.3 Kbytes 页数：9 Pages

PHI

PHI