N-channel TrenchMOS transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP66NQ03LT in SOT78 (TO-220AB) PHB66NQ03LT in SOT404 (D2-PAK) PHD66NQ03LT in SOT428 (D-PAK) Features ■ Low on-state resistance ■ Fast switching

文件：301.04 Kbytes 页数：14 Pages

PHI

飞利浦

N-channel TrenchMOS logic level FET

General description Logic level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology Features ■ Logic level threshold ■ Low on-state resistance. Applications ■ DC-to-DC converters ■ General purpose switching.

文件：96.22 Kbytes 页数：13 Pages

恩XP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 66A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 16mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.61 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS transistor

Description\nN-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology.\nProduct availability:\n   PHP66NQ03LT in SOT78 (TO-220AB)\n   PHB66NQ03LT in SOT404 (D2-PAK)\n   PHD66NQ03LT in SOT428 (D-PAK) ■ Low on-state resistance\n■ Fast switching.Applications\n■ High frequency computer motherboard DC to DC converters.;

恩XP

恩智浦