isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 73A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 16mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

无锡固电

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low

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安世安世半导体(中国)有限公司

N-Channel 80 V (D-S) MOSFET

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VBSEMI

微碧半导体

N-channel TrenchMOS logic level FET

文件：222.17 Kbytes 页数：13 Pages

恩XP

N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. • Low conduction losses due to low on-state resistance\n• Suitable for logic level gate drive sources;

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