isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.57 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 650V (D-S) Power MOSFET

文件：1.10597 Mbytes 页数：10 Pages

VBSEMI

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PowerMOS transistors Avalanche energy rated

文件：41.63 Kbytes 页数：7 Pages

PHI

PHI

PowerMOS transistors Avalanche energy rated

文件：102.87 Kbytes 页数：9 Pages

PHI

PHI

PowerMOS transistors Avalanche energy rated

文件：41.63 Kbytes 页数：7 Pages

PHI

PHI

Power MOSFET

FEATURES • Low Gate Charge Qg results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and Avalanche Voltage    and Current • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptib

文件：165.8 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

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