N-channel enhancement mode field-effect transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Features ■ Low gate charge ■ Low on-state resistance. Applications ■ Optimized as a control FET in DC to DC converters.

文件：293.21 Kbytes 页数：14 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.79 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel enhancement mode field-effect transistor

Description\nN-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. ■ Low gate charge\n■ Low on-state resistance.Applications\n■ Optimized as a control FET in DC to DC converters.;

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N-channel enhancement mode field-effect transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Features ■ Low gate charge ■ Low on-state resistance. Applications ■ Optimized as a control FET in DC to DC converters.

文件：293.21 Kbytes 页数：14 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：344.81 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low

文件：331.74 Kbytes 页数：14 Pages

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