N-channel enhancement mode field-effect transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Features ■ Low gate charge ■ Low on-state resistance. Applications ■ Optimized as a control FET in DC to DC converters.

文件：293.21 Kbytes 页数：14 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：344.81 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFET N-CH 25V 75A D2PAK

恩XP

N-channel enhancement mode field-effect transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Features ■ Low gate charge ■ Low on-state resistance. Applications ■ Optimized as a control FET in DC to DC converters.

文件：293.21 Kbytes 页数：14 Pages

PHI

飞利浦

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low

文件：331.74 Kbytes 页数：14 Pages

NEXPERIA

安世